Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors

Abstract

Resistive random access memories (RRAMs) are considered as key enabling components for a variety of emerging applications due to their capacity to support multiple resistive states. Deciphering the underlying mechanisms that support resistive switching remains to date a topic of debate, particularly for metal-oxide technologies, and is very much needed for optimizing their performance. This work aims to identify the dominant conduction mechanisms during switching operation of Pt/TiO2-x/Pt stacks, which is without a doubt one of the most celebrated ones. A number of identical devices were accordingly electroformed for acquiring distinct resistive levels through a pulsing-based and compliance-free protocol. For each obtained level, the switching current-voltage (I-V) characteristics were recorded and analyzed in the temperature range of 300 K–350 K. This allowed the extraction of the corresponding signature plots revealing the dominant transport mechanism for each of the I-V branches. Gradual (analogue) switching was obtained for all cases, and two major regimes were identified. For the higher resistance regime, the transport at both the high and low resistive states was found to be interface controlled due to Schottky emission. As the resistance of devices reduces to lower levels, the dominant conduction changes from an interface to the core-material controlled mechanism. This study overall supports that engineering the metal-oxide/metal electrode interface can lead to tailored barrier modifications for controlling the switching characteristics of TiO2 RRAM.