Abstract
AbstractThe drain current in polycrystalline silicon (polysilicon) TFTs (Thin Film Transistors) increases with increase of the gate voltage even if the polarity of the gate voltage is opposite to that of the drain voltage. This behavior is different from that in single‐crystal silicon MOSFET's. In this paper, to clarify the mechanism of this drain current, the dependence of the reverse bias current of polysilicon p+in+ diode with an MOS gate on voltage and temperature is examined. As a result, it is found that the mechanism of this current is Poole‐Frenkel current. Moreover, a simple model to explain the voltage and temperature dependence of this drain current is proposed, and its propriety is shown.
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