Abstract
In this brief, we find that the previously reported performance improvement of HfO2/SrTiO3 devices after argon bombardment may be attributed to the decrease of interface traps. With the greatly reduced interface trap density, the HfO2/SrTiO3 device after argon bombardment shows remarkable reduction of turn-ON voltage shift with decreasing temperature, which is in contrast with the unbombarded HfO2/SrTiO3 device. Though HfO2/SrTiO3 devices behave like conventional transistors, Al2O3/SrTiO3 devices show very different linear transfer characteristics, which may be due to the high density of shallow donor states near the Al2O3/SrTiO3 interface. The exhibited SrTiO3-based device characteristics are studied by experiments and simulations. The simulations with drift-diffusion model reproduce the experimental results.
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