Abstract
Conduction band offset for Ga0.62In0.38NxAs0.991−xSb0.009∕GaNyAs1−y∕GaAs systems with different N contents (x=2.2%–3.0% and y=3.1%–4.3% of N) has been investigated by contactless electroreflectance spectroscopy supported by theoretical calculations performed within the effective mass approximation. It has been found that Ga0.62In0.38NxAs0.991−xSb0.009∕GaNyAs1−y quantum wells (QWs) are promising for laser applications from the point of view of carrier confinement since the conduction band offset (QC) for these QWs is between 70% and 75%. In addition, it has been shown that GaNAs∕GaAs interface is type I with QC between 80% and 90%.
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