Abstract
Investigation has been done of bipolar resistive switching mechanism of Pt/Nb2O5/Pt and Bare conductive paint (BCP)/ Nb2O5/Pt memristive devices with orthorhombic phase prepared by e-beam evaporation method. The device exhibits reproducible switching with a ratio of (Roff/Ron) of 20 or higher which is good enough in read out for practical memory devices. The device exhibits reversible switching and better consistency during the switching from a high resistance state to a low resistance state and vice versa under a low operational voltage (<±1 V) due to its controlled formation and/or annihilation of conduction path. Switching mechanism is elucidated using a model invoking drift and diffusion of oxygen vacancies for the formation and rupture of conduction path during the Set and Reset process. The as deposited Nb2O5 thin film shows itself as amorphous in nature and transferred to orthorhombic phase by post annealing at 600 °C/30 min in O2 ambient. The reliability test of memristive device stack structures has been investigated by observing the retention of 600 min and reproducible switching through endurance test of over 1000 cycles which is better than the reported structures employing single layer of Nb2O5. The device does not show any performance degradation during the test.
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