Abstract
AbstractIn this work, the electrical and electroluminescence properties of para‐hexaphenylene (p6P) thin films and nanofibers have been investigated in a field‐effect transistor device configuration with interdigitated source‐drain bottom contact electrodes. P‐type behavior of thin films is observed with a mobility of 1×10‐6 cm2/Vs and a threshold voltage around ‐30 V. AC gated devices show electroluminescence for both thin films and stamped nanofibers even when the drain electrode is floating. This suggests either hole and electron injection from the same electrode or impact ionization. The highest electroluminescence intensity is observed from thin film FETs with a 2.5 µm source‐drain gap. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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