Abstract
We report a simple and reproducible method to fabricate switchableAg2S devices.The α-Ag2S thin films are produced by a sulfurization process after silverdeposition on an Si substrate. Structure and composition of theAg2S are characterized using XRD and RBS. Our samples show semiconductor behaviour at lowbias voltages, whereas they exhibit reproducible bipolar resistance switching at higher biasvoltages. The transition between both types of behaviour is observed by hysteresis in theI–V curves, indicatingdecomposition of the Ag2S, increasing the Ag+ ionmobility. The as-fabricated Ag2S samples are a good candidate for future solid state memory devices, as they showreproducible memory resistive properties and they are fabricated by an accessible andreliable method.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
