Abstract
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.
Highlights
The persistent perusing of massive storage volume has been driving the scaling-down process of memory devices for decades
We focus our attention on the recent development of the research on the quantized conductance (QC) effect in conductive filament (CF)-based non-volatile resistive switching (RS) devices including basic QC phenomenon in Resistive random access memory (RRAM), RS mechanisms, device structures, materials, theory, and modeling of conductance quantization in RRAM
Operating Methods To successfully observe the QC effect in RRAMs, it is of importance to make use of appropriate operating methods to the devices to accurately control the size of CFs to be close to the atomic scale
Summary
The persistent perusing of massive storage volume has been driving the scaling-down process of memory devices for decades. Memories characterized by low-power consumption and low fabrication cost are needed. Intensive studies have been carried out in seeking for the next-generation memories. Resistive random access memory (RRAM) has become one of the most promising candidates for the next-generation memory [3,4,5,6,7,8,9,10,11,12,13,14] because of the intrinsic excellent scalability, simple metal-insulator-metal (MIM) structure, low fabrication cost, 3D integration feasibility, and promising performances in speed, power, endurance, retention, etc. Under appropriate external electrical field, the resistance state of the RRAM device can be reversibly switched
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