Abstract
In this work, we fabricated a Pt/SiN/TaN memristor device and characterized its resistive switching by controlling the compliance current and switching polarity. The chemical and material properties of SiN and TaN were investigated by X-ray photoelectron spectroscopy. Compared with the case of a high compliance current (5 mA), the resistive switching was more gradual in the set and reset processes when a low compliance current (1 mA) was applied by DC sweep and pulse train. In particular, low-power resistive switching was demonstrated in the first reset process, and was achieved by employing the negative differential resistance effect. Furthermore, conductance quantization was observed in the reset process upon decreasing the DC sweep speed. These results have the potential for multilevel cell (MLC) operation. Additionally, the conduction mechanism of the memristor device was investigated by I-V fitting.
Highlights
Resistive switching random access memory (RRAM) is a promising candidate for nextgeneration non-volatile memory owing to its high scalability, low-power operation, high switching speed, long retention time, and high endurance [1,2,3]
We investigated the X-ray photoelectron spectroscopy (XPS) spectra of the SiN and TaN layers, and Ar+ etching was used to obtain chemical and material information about these two layers
The peak binding energy of Si 2p is centered at 102.2 eV for the Si-N bond [14], indicating that the SiN film formed through plasma-enhanced chemical vapor deposition (PECVD) did not have the stoichiometry of Si3 N4
Summary
Resistive switching random access memory (RRAM) is a promising candidate for nextgeneration non-volatile memory owing to its high scalability, low-power operation, high switching speed, long retention time, and high endurance [1,2,3]. In a metal-insulator-metal structure, resistive switching occurs by bias voltage and optical stimulation and results in a change in the internal resistance. Metal electrodes play an important role in resistive switching. Diffusive metals such as Ag and Cu can enter the insulator and form a conducting filament [4,5,6]. In the case of inert metals such as Pt and. Intrinsic switching of the insulating layer occurs [7]. The use of a reactive-type metal with oxygen such as TiN and
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