Abstract
Conductance oscillation characteristics in GaAs-based Schottky wrap gate (WPG) single-electron transistors (SETs) were investigated both experimentally and theoretically in view of application as a key switching device in future quantum-integrated circuits. Fabricated WPG SETs showed that clear conductance oscillation characteristics with a small number of high conductance peaks. A simple theory based on a quantum mechanical treatment reproduced qualitatively the features of the experimentally observed conductance peaks, indicating that the resonant tunneling contributes to currents in the WPG SETs. However, quantitatively, a discrepancy existed between theory and experiment on the temperature dependence of peak heights.
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