Abstract

We have developed a concurrent x-ray diffractometer that concurrently measures spatially resolved x-ray diffraction (XRD) spectra of epitaxial thin films integrated on a substrate. A convergent x-ray is focused into stripe on a substrate and the diffracted beam is detected with a two-dimensional x-ray detector. The obtained snapshot image represents a mapping of XRD intensity with the axes of the diffraction angle and the position in the sample. In addition to the parallel XRD measurements of thin films with various compositions and structures, two-dimensional spatial mapping of XRD peak with a resolution of ∼100 μm is demonstrated. This technique will provide us a high throughput characterization method of various devices composed of epitaxial films.

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