Abstract
Doped graphene materials are of huge importance because doping with electron-donating or electron-withdrawing groups can significantly change the electronic structure and impact the electronic and electrochemical properties of these materials. It is highly important to be able to produce these materials in large quantities for practical applications. The only method capable of large-scale production is the oxidative treatment of graphite to graphene oxide, followed by its consequent reduction. We describe a scalable method for a one-step doping of graphene with phosphorus, with a simultaneous reduction of graphene oxide. Such a method is able to introduce significant amount of dopant (3.65 at. %). Phosphorus-doped graphene is characterized in detail and shows important electronic and electrochemical properties. The electrical conductivity of phosphorus-doped graphene is much higher than that of undoped graphene, owing to a large concentration of free carriers. Such a graphene material is expected to find useful applications in electronic, energy storage, and sensing devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
