Abstract
The electrical resistivity, magnetic properties and structure of Co(Si, Al)(N, O) films, prepared by r.f. reactive magnetron sputtering with (Ar+O 2 or N 2) gases, have been studied. Transmission electron microscopy observation reveals that the films are composed of grains finer than 10 nm. A considerable amount of compositional deviation is observed between the grain and intergrain regions. The electrical resistivity of the films increases on increasing the O 2 or N 2 gas flow ratio in the sputtering gas, which is attributed to the nitriding or oxidizing of the intergrain region. The resistivity reaches anomalously high values 10 3–10 7 μΩ cm. The films with resistivity less than about 10 4 μΩ cm exhibit soft magnetic properties. Nitrided films exhibit a particularly good frequency response of their permeability. The loss terms are small, even in the high frequency region, and are approximately consistent with those calculated by the Landau-Lifshitz equation.
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