Abstract

The structure and properties of Co 95Fe 5MeN films (M ≡ Al, B or Si), prepared by r.f. reactive magnetron sputtering with N 2Ar gases, have been studied. Transmission electron microscopy observation reveals that the nitrided films are composed of a very fine network of heterogeneous phases. The electrical resistivity of films increases with increasing nitrogen flow ratio in the sputtering gas (ArN 2) and is attributed to the refinement of structure due to nitridation. The films containing Si or Al exhibit soft magnetic properties, characterized by a good frequency response of permeability. The existence of a larger amount of M further increases the resistivity, suggesting that the presence of the MN phase plays an important role in high resistivity.

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