Abstract
Computer studies are presented on the effect of carrier current multiplication on the d.c. field and current profiles and the small-signal admittance of a symmetrical Si double-drift region (DDR) IMPATT diode, taking into account the realistic field dependence of ionization rate and drift velocity of charge carriers and also the effect of mobile space-charge. The d.c. field and current profiles indicate that the lowering of the electron current multiplication ( M n ) is more effective than the lowering of hole current Multiplication factor ( M p ) in modifying the d.c. properties of Si DDR devices. The computer-aided small-signal analysis carried out for the same structure shows that, a lowering of M n leads to a sharp decrease of the peak value of the small-signal negative conductance at a fixed d.c. current density which is accompanied by a shift of the frequency range of oscillation towards the higher frequency side.
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