Computer simulation of the single crystal surface modification and analysis at grazing low-energy ion bombardment

Abstract

The specific peculiarities of 0.5-10 keV Ne+, Ar+, Kr+, Be+ and Se+ ions scattering, sputtering and implantation processes at grazing ion bombardment of GaAs (001), Si(001), SiC(001) and Cu(100) surfaces and their possible application for the surface modification and analysis have been studied by computer simulation. Sputtering yields in the primary knock-on recoil atoms reghne versus the initial energy of incident ions (E0 = 0.5-5 keV) and angle of incidence (ψ = 0-30°) counted from a target surface have been calculated. The colliding particles mass ratio influence on the energy losses of scattering particles, sputtering yields and near-surface depth distributions of implanted particles is established, ft was shown that in the case of grazing ion bombardment the layer-by-layer sputtering is possible and its optimum are observed within the small angle range of the glancing angles near the threshold sputtering angle. Comparative studies of layer-by-layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed.