Abstract
To investigate influence of lattice mismatching on crystalline quality of heteroepitaxialy grown layer, we have grown and characterized InGaAs on several different substrates. In this work, to disclose growth mechanism of lattice-mismatched crystal layer, we attempted to calculate theoretically the strain energy accumulated in the grown layer. We use the valence force field(VFF) method to calculate the strain energy microscopically. When the size of crystal is so small as atomic scale, the VFF method is more exact than other macroscopic methods. Calculated critical layer thickness of InAs/GaAs is not different from experimental results.
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