Abstract
A numerical analysis of long-wavelength multi-junction photodiodes constructed from Cd x Hg 1− x Te heterostructures is performed. The standard Newton iterative scheme is applied to solve the non-linear system of continuity equations and the Poisson equation. All quantities are expressed as a function of electric potential and quasi-Fermi levels. Results of computations are presented in the form of maps and plots illustrating spatial distributions of electrical potential and responsivity. Such an illustration enables us to explain the effect of reverse sign of the photovoltage occurring in photoelectric devices being manufactured.
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