Abstract
The theoretical analysis of long wavelength uncooled photovoltaic devices based on complex two-dimensional Hg1−xCdxTe heterostructures is presented. An enhanced computer program has been developed to solve the system of nonlinear continuity equations and the Poisson equation. All physical quantities of semiconductor structure are expressed as functions of electric potential and Fermi quasi-levels. The noise analysis is based on the set of ‘transport equations for fluctuations’ that enables calculations of spatial distribution of electrical potential and Fermi quasi-level fluctuations. Both generation–recombination noise and 1/f noise caused by mobility fluctuations were taken into account. The results of calculations are presented as maps illustrating spatial distributions of current densities, electrical gain, and fluctuations of selected physical quantities. Detectivity of 4×107 cmHz1/2W−1 is predicted for a 10.6 μm unbiased multiple heterojunction photovoltaic device with 20 μm period. The theoretical predictions have been compared with performance of practical devices.
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