Abstract
The first computer simulation of the ionizing-radiation-induced burnout in power MOSFETs is reported. The modeling results support a current-induced avalanche burnout mechanism at the interface of the epitaxial layer and the substrate coupled with parasitic bipolar transistor action, leading to secondary breakdown and thermal runaway. The simulations allow an evaluation of the effects of semiconductor parameters, device geometry, doping profiles, and bias voltage on the burnout dose-rate threshold. The model provides a method for optimizing the radiation hardness of power MOSFETs. >
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