Abstract

The novel binary collision approximation Monte Carlo (BCA-MC) computer codes TRIRS and DYTRIRS for simulating ion sputtering of polyatomic nonuniform amorphous targets are presented. TRIRS simulates the collision cascade in a target and related secondary processes, including sputtering, damage generation etc., being more realistic than similar MC-BCA codes in modeling low-energy interatomic collisions. These improvements ensure better simulation of low-energy atomic collision processes in nonuniform targets, like sputtering, and ultra-low energy ion implantation. DYTRIRS is the extension of TRIRS which simulates the dynamics of the ballistic stage of ion-induced modification and sputtering for a target under high-fluence ion irradiation. The efficiency of DYTRIRS is verified by comparing the simulation of sputtering and secondary-ion mass-spectrometry in-depth compositional profiling of molecular-beam epitaxy grown two-dimensional (Al,Ga)AsGaAs (001) heterostructures, including structures with silicon and aluminum marker layers.

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