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https://doi.org/10.1016/b978-0-444-81993-2.50079-2
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Cite Publication Date: Jan 1, 1994 |
Affiliation: Tokyo Fuji University, Nagoya University
Using Monte Carlo method the growth of layers on (001) plane of silicon was simulated. At a slow deposition rate, one layer by one layer growth was observed, but at a faster deposition rate, next (001) layer deposition was started before completing a (001) layer. At a faster deposition rate, island growth was observed.
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