Abstract
A comprehensive fully self-consistent optical–electrical–thermal-recombination model of the 650-nm oxide-confined GaAs-based GaInP/AlGaInP vertical-cavity surface-emitting diode lasers (VCSELs) is used to determine their anticipated room-temperature (RT) continuous-wave (CW) performance characteristics. As expected, for the devices with very large active regions, higher-order transverse LPij modes exhibit the lowest lasing thresholds. However, the desired single fundamental LP01 mode operation remains dominating one for relatively large active regions of diameters up to as much as 10mm. Therefore, the 650-nm GaInP/AlGaInP QW VCSELs have been found to offer a very promising RT CW performance as sources of carrier radiation for the optical communication taking advantage of plastic (polymer) optical fibers (POFs).
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