Enhanced single-fundamental LP01 mode operation of 650-nm GaAs-based GaInP/AlGaInP quantum-well VCSELs

Abstract

Minimal optical attenuation of plastic (polymer) optical fibres (POFs) corresponds to the 650-nm wavelength. Currently the GaInP/AlGaInP quantum-well (QW) oxide-confined (OC) vertical-cavity surface-emitting diode lasers (VCSELs) are undoubtedly the laser devices most suited to be used in 650-nm POF optical communication, for which the stable single-fundamental-mode LP01 emission (SFM) is definitely the one most desired. In the present paper, the comprehensive fully self-consistent VCSEL model is used to examine mode selectivity of the above VCSELs. An increase in the VCSEL active-region diameter leads to a gradual modification of the current injection into this region and subsequent carrier radial diffusion within it before their recombination, which is followed by an essential transformation of active-region optical-gain profiles deciding upon an excitation of successive transverse modes. In standard arsenide OC VCSELs, SFM operation is usually limited to relatively small active regions. But for a room-temperature continuous-wave operation of the GaInP/AlGaInP VCSELs, the fundamental LP01 mode remains surprisingly the lowest-threshold one up to relatively large active regions of 9-µm diameters. Nevertheless, in such VCSELs, thresholds of many LP modes become very similar to one another, which leads to their relatively poor mode selectivity and an unwanted multi-mode operation for higher output powers.