Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG

Abstract

Characteristics of GaAs-based single electron transistors (SETs) based on Schottky wrap gate (WPG) control of the two dimensional electron gas were studied. The two-gate and the newly proposed three-gate devices with different WPG sizes and channel widths were theoretically analyzed on a computer and experimentally fabricated and characterized. The computer simulation showed that dots and tunneling barriers could be formed in both the two- and the three-gate SETs. In the case of the two-gate SETs, both the dot size and the tunnel barriers were changed simultaneously by the gate voltage. On the other hand, in the case of the newly proposed three-gate SET, the dot size and the potential profile of the tunneling barrier could be separately controlled. Experimentally fabricated the two- and the three-gate SETs with narrow channel widths showed conductance oscillation characteristics which were consistent with the results of potential simulation.