Computer Simulation and Analysis of High Resolution Electron Microscope Images and Diffraction Patterns of Semiconductor Interfaces

Abstract

In recent years there has been considerable interest in the atomic structure of transition metal silicides and the interfacial region they form with crystalline Si. This is of prime importance in increasing the understanding of the origin of Schottky barrier formation and ohmic contacts in diode applications. High resolution transmission electron microscopy (TEM) offers the potential of direct observation of atomic image detail at the interface which may be interpreted in terms of atomic position models, the diffraction process at the interfacial region and the microscope performance. To this end, it has recently been demonstrated that TEM computer image simulation experiments on the Pd2Si/Si interface could be obtained that show remarkable agreement with real microscope experiments. Also exploratory STEM microdiffraction computer simulation experiments have been performed to demonstrate space group symmetry and atomic position determination to a fraction of a unit cell dimension in Pd2Si or Si.