Computer simulated and channelling studies of damage distributions in phosphorus implanted silicon

Abstract

Lattice disordering has been studied both experimentally by RBS-channelling measurements and theoretically by a Monte Carlo calculation technique. Single-crystal (100) silicon has been phosphorus implanted with an energy of 60 keV at room temperature in a 7° off-axis direction. The implanted doses varied between 5 x 10 14 and 4 x 10 15 cm −2. Channelling measured distribution of displaced atoms is compared with damage profiles in phosphorus implanted silicon calculated by the computer code TRIM.