Abstract
Damage distributions in n-Si bombarded at 45 K with 10–40 keV H + ions have been measured using the channeling technique. A comparison of the measured distributions with those determined using Monte Carlo calculation techniques indicates that (a) the electronic stopping cross-section is ∼ 60% higher than the standard Lindhard value over the energy range of 10–40 keV and, (b) calculated deposited energy distribution better approximates the measured displaced atom distribution if recoil energies < 50 eV are not included in the calculation. Annealing studies showed significant recovery occurring below 120 K compatible with vacancy migration.
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