Abstract
The problem of this work is development of scientific foundations of technological plasma processes for defect-free synthesis and processing of nanoscale structures for use in nanoelectronics. The goal of this work is development of a method for numerical calculation of the parameters of the ion flow to the sample for the real geometry of the beam-plasma installation. Results. We have created a numerical model for the development of a beam-plasma discharge by an electron beam in the absence of a buffer plasma and a longitudinal magnetic field. It is shown that the KARAT code allows us to solve the problem of developing beam instability in the absence of a buffer plasma. It was also shown that beam instability develops without a longitudinal magnetic field. The electric field created by the instability does not affect the peripheral plasma. The experimental verification of the numerical modeling results is carried out. The plasma concentration and electron temperature distributions obtained in the model are in qualitative agreement with the experimental ones. Practical significance. The model allows us to select the optimal modes of a plasma-chemical reactor based on a beamplasma discharge for the implementation of processes of defect-free ion-plasma treatment and synthesis of nanoscale structures.
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