Computer-aided study of steady-state carrier lifetimes under arbitrary injection conditions

Abstract

The steady-state minority and majority carrier lifetimes are calculated using an exact steady-state equivalent circuit model. The exact majority and minority carrier lifetimes are calculated as functions of position in a diffused silicon P/ N junction diode doped with zinc, and as functions of bias voltage or injection level. Factors which affect carrier lifetimes are pointed out and illustrated. Lifetimes due to the presence of multiple energy level Shockley-Read-Hall centers are also discussed. The exact carrier lifetimes at very low and very high injection levels computed from this model agree well with those calculated from the analytical expressions derived by Shockley and Read.