Abstract
Theoretical study of the formation of STM images of the GaN(001)-(2×2) surface is presented. Calculation of the tunnelling current between the tip and the substrate is based on the non-equilibrium Green-function formalism. Tunnelling current and conductance, calculated for W and Al tips, and different voltages and distances, are analysed. Our simulations show that for both considered tips, the topography of images, given by unoccupied surface states, correctly reproduces a (2×2) reconstruction of the substrate surface. Presented results confirm the important role of the tunnelling through d orbitals of the W tip in the process of the STM image formation.
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