Computationally Efficient Region-Wise Potential- Based Extremely Closed-Form Analytical Modeling of B/N Substitution Doped GFETs

Abstract

A simplified region-wise potential-based analytical model is established for boron (B) or nitrogen (N) substitution doped graphene field-effect transistor (GFET). The closed-form direct analytical relation between graphene channel potential and applied bias condition is developed by imposing the effective approximation for Fermi–Dirac integral function in various regions of operation. The boundary for distinct GFET operating regime is separated based on the position of Dirac point and Fermi energy level with respect to applied bias condition. The semiclassical drift and diffusive transport model is utilized to obtain the drain current. In addition to that, the drift component, diffusion coefficient, and its corresponding current component for B and N substitution doped GFETs have been modeled individually and their influence on total current is discussed. The proposed region-potential-based analytical model has shown good agreement with numerically solved self-consistent model. Also, the physical insights in device design, such as threshold voltage and saturation drain potential model with respect to various doping/device parameters, have been examined.