Abstract
For a Czochralski crystal growth of sapphire, influence of radiative heat transfer and gas convection on the temperature field of the system and the crystal-melt interface have been studied numerically using the finite element method. For radiative heat transfer, internal radiation through the grown crystal and surface to surface radiation for the exposed surfaces have been taken into account. Comparison between the results presented here and those of previous works demonstrate the importance of heat radiation, gas flow and realistic heat transfer boundary conditions on the thermal field of oxide Czochralski growth systems.
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