Computational modeling of transport phenomena and detailed chemistry in chemical vapor deposition – a benchmark solution

Abstract

Two-dimensional simulations are presented of the full multi-component transport phenomena and the multi-species, multi-reaction chemistry in thermal chemical vapor deposition (CVD) of silicon in a rotating disk/stagnation flow reactor. The detailed description of the problem definition and model equations allows for easy reproduction of the presented simulations, which were validated against the well-known one-dimensional SPIN code from SANDIA by Coltrin and co-workers. Thus, the simulation results can be used as a benchmark against which (commercial) multi-dimensional CVD equipment simulation codes can be validated.