Abstract
Massively Scalable Ternary Content-Addressable Memories In article number 2200643, Xunzhao Yin, Xiao Gong, and co-workers present high-performance floating-gate transistors with an amorphous-InGaZnO channel and the application in ternary content addressable memories (TCAMs). The two-transistor configuration and the extremely low OFF current of the TCAM cell significantly improve the scalability of the TCAM array.
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