Abstract
The ground-state energy and the compressibility for the interacting electron–hole plasma in semiconductor quantum wells are discussed taking into account finite well width and strain effects as a function of sheet carrier density. Many-body effects are evaluated within the Hartree-Fock approximation and the valence-band nonparabolicity due to band mixing is examined by solving the Luttinger-Kohn Hamiltonian. The results are applied to InxGa1—xAs/InGaAsP/InP quantum wells and we observe that the ground-state energies are lowered with increasing sheet carrier density and quantum confinement effect. These variations of ground-state energy depending on the sheet carrier density and the quantum confinement effect have considerable effects on the thermodynamic compressibility of electrons and holes.
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