Abstract
The use of a new feedback scheme to achieve unconditionally stable MESFET transistors from 0 GHz until cutoff is presented. The methodology is applied for both common-source and common-gate MESFET transistor configurations. Analytical formulation of the stabilization methodology is presented. In addition, two coplanar-waveguide-based amplifiers were designed to operate at Ka-band, monolithically fabricated, and tested, thus, verifying the methodology. The study includes the effects of the bias change on the feedback amplifier stability performance.
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