Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors

Abstract

In this work, the device characteristics of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors (DCPHEMTs) with triple δ-doped sheets are comprehensively and systematically investigated. The triple δ-doped sheets densities are found to be crucial for improving device performance. Based on a two-dimensional simulator of Atlas, the detailed calculations and studies including energy band diagrams, carrier distributions, and DC and microwave performances are reported. Due to the use of InGaAs DC structure and InGaP Schottky and buffer layers, good pinch-off and saturation characteristics, higher current drivability, larger and linear transconductance, and excellent microwave performance are obtained. For comparison, a practical DCPHEMT with good device performance is fabricated. Generally, good agreements between experimental results and theoretical simulations are found. The DCPHEMT with proper designed triple δ-doped sheet densities is promising the promise for high-performance digital and microwave device applications.