Abstract
In this work, to the best of our knowledge, it is the first time to report the high-frequency switching stabilities (up to 300kHz) under a 800V of V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf> during hard switching (HSW) and zero voltage switching (ZVS) operations in SiC power devices. The switching dependencies, i.e., temperature, frequency, current, and duty cycle, are evaluated based on the proposed topology, showing the flexible design to effectively investigate the circuit-level switching stability. Furthermore, the high-frequency switching stability in GaN power devices is also evaluated for the comparison, indicating that SiC power device shows a better R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dson</inf> stability under ZVS and HSW during the high-frequency switching.
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