Recent Progress in SiC and GaN Power Devices

Abstract

Wide bandgap SiC and GaN power devices are attractive for next-generation power electronic systems with increased efficiency and power density. In this paper, we review recent progress in SiC and GaN power devices, including the following. (1) Interface optimization techniques for SiC MOSFETs (e.g. NO/N2O annealing, P incorporation, metal interfacial-layer, high-k dielectric deposition, etc.) will be discussed. (2) Long-term reliability of SiC MOSFETs with special focus on time-dependent dielectric breakdown (TDDB) will be presented. (3) We will introduce our latest progress in the development of superjunction SiC devices, which can break the fundamental limit of the conventional unipolar devices. (4) In GaN-based lateral power devices, the 2DEG channel is an inherent normally-on channel. To achieve fail-safe operation and simpler gate drive circuit, normally-off device techniques will be introduced and compared.