Comprehensive comparison of 3D-TSV integrated solid-state drives (SSDs) with storage class memory and NAND flash memory

Abstract

Three dimensional (3D) through-silicon via (TSV) integrated solid-state drive (SSD) with storage class memory (SCM) has been proposed as a candidate for the next generation storage drive. The 3D-TSV SSD has advantages of fast speed, low energy consumption, and high endurance [1–3]. This paper comprehensively compares the characteristics of SSDs with and without 3D-TSV. First, different data management algorithms are explained by using SSDs with different memory devices, respectively. Moreover, their write performances, energies and required minimum I/O data rates are simulated and compared. Specifically, the all SCM SSD increases write performance by 295 times compared with MLC only NAND flash SSD, due to the high SCM performance. As for the SCM/MLC NAND hybrid SSD, the write energy reduces 68% by applying 3D-TSV. In addition, only the all SCM SSD needs higher I/O data rate than the conventional 400 MBytes/s NAND flash I/O data rate.