Abstract
The essential steps in simulations of modern separate absorption, grading, charge, and multiplication avalanche photodiode and their results are discussed. All simulations were performed using two commercial technology computer-aided design type software packages, namely Silvaco ATLAS and Crosslight APSYS. Comparison between those two frameworks was made and differences between them were pointed out. Several examples of the influence of changes made in individual layers on overall device characteristics have been shown. Proper selection of models and their parameters as well as its significance on results has been illustrated. Additionally, default values of material parameters were revised and adequate values from the literature were entered. Simulated characteristics of optimized structure were compared with ones obtained from measurements of real devices (e.g., current-voltage curves). Finally, properties of crucial layers in the structure were discussed.
Highlights
Near-infrared (NIR) regime of wavelength, from 0.75 to ∼3 μm, is undoubtedly very important in many modern technologies
Simulations of above-mentioned avalanche photodiodes (APDs) were performed in two software packages, which are described in the subsequent section
Results presented in this paper were obtained by the use of two software packages, namely Crosslight APSYS and Silvaco ATLAS (ATLAS is an element of Silvaco technology computer-aided design (TCAD) software).[5,6]
Summary
Near-infrared (NIR) regime of wavelength, from 0.75 to ∼3 μm, is undoubtedly very important in many modern technologies. Achieving higher throughput and faster information exchange was possible Thanks to their internal gain, avalanche photodiodes (APDs) very quickly started to replace devices used up until in many applications, e.g., photomultipliers. The process of designing such complicated modern devices as APDs requires deep understanding of semiconductor physics. Even in such cases, it is very difficult to predict overall properties of the structure. Modern technology can be helpful in designing photodiodes via more and more sophisticated simulation software with many numerical models of physical phenomena implemented. This type of software package belongs to a category defined as technology computer-aided design (TCAD). One can deepen the knowledge of physical processes existing in considered structures by detailed analysis of obtained results
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