Comprehensive analysis of microtwins in the 3C–SiC films on Si(0 0 1) substrates

Abstract

Microtwins in the 3C–SiC films grown on Si(0 0 1) by atmosphere pressure chemical vapor deposition(APCVD) were investigated in detail using X-ray four-circle diffractometry. The Φ scan shows that 3C–SiC films can grow on Si substrates epitaxially and epitaxial relationship is revealed as (0 0 1) 3C–SiC∥(0 0 1) Si, [1 1 1] 3C–SiC∥[1 1 1] Si. Other diffraction peaks at about 15.8° in x emerged in the pole figures of the (1 1 1) 3C–SiC. We performed the pole figure of (1 0 1 ̄ 0) h–SiC and the reciprocal space mapping from the (1 1 1) reciprocal lattice point of base SiC to the (0 0 2) point of microtwin for the first time, indicating that the diffraction peaks at 15.8° in x result from not hexagonal SiC but microtwins of 3C–SiC, and twin inclusions are estimated to be around 1%.