Compound Semiconductors

Abstract

AbstractThis issue of physica status solidi contains manuscripts presented at the 40th International Symposium on Compound Semiconductors (ISCS 2013) held in Kobe, Japan, May 19–23, 2013. The ISCS 2013 was co‐located with the 25th International Conference on Indium Phosphide and Related Materials (IPRM 2013) during the Compound Semiconductor Week (CSW 2013).The CSW 2013 was kicked‐off with a joint plenary session. The four distinguished plenary speakers and the titles of their talks were: Prof. Chennupati Jagadish (III–V Semiconductor Nanowires for Optoelectronics and Energy Applications), Dr. Daisuke Ueda (GaN based “Green” Devices), Prof. Osamu Wada (Advances in III–V Semiconductor Photonics: Nanostructures and Integrated Chips), Prof. Peide Ye (III–V MOS Technology: from Planar to 3D and 4D). The opening session was followed by invited talks, contributed oral presentations, and poster presentations in both the ISCS and the IPRM. Also included in the technical program were two short courses given by Prof. Masafumi Yamaguchi and Dr. Radhakrishnan Nagarajan as well as a rump session.The week also included an awards ceremony, three courses of excursions and conference banquet in Kacho‐en, a theme park of flowers and birds.We would like to thank all the participants of the ISCS 2013 for contributing to the success of the symposium and acknowledge the diligent work of the committee members and the referees of manuscripts. A special appreciation is due to Prof. Takashi Kita and other members of Kobe University for their excellent local organization.The 41st International Symposium on Compound Semiconductors (ISCS 2014), organized by Prof. Eric Tournié will be held in Montpellier, France, May 11–15, 2014. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)