Abstract
Photoelectrochemical water splitting is far more efficient thanks to the novel ZnOSe/ZnO/BZO thin-film photoanodes fabricated in this work. A novel structure is developed for simultaneously suppressing the charge recombination in the ZnO bulk and at the semiconductor-electrolyte interface. This structure achieves a five-fold enhancement in water-splitting performance, compared to that of pristine ZnO photoanodes, when illuminated using visible light.
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