Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals

Abstract

The effect of the supply of depleted Si solute elements on the compositional variation in the Si-rich SiGe bulk crystals was studied using the method which was used to grow Ge-rich SiGe single crystals with a uniform composition. By selecting the proper pulling rate, we can obtain Si-rich Si 1− x Ge x bulk crystals with uniform composition of x=0.1 without using the supply mechanism of depleted Si solute elements. When the supply mechanism of Si solute elements was used, the initial composition in Si-rich SiGe crystals can be much more easily determined by controlling the growth temperature than that in Ge-rich crystals because the Si seed crystal is not melted down. The supply of Si solute elements is very effective to change the compositional variation even for Si-rich SiGe crystals.