Abstract
Compositionally graded (BaxSr1−x)TiO3 films are deposited on Pt∕Ti∕SiO2∕Si via chemical solution deposition to investigate permittivity temperature stability improvement. Dielectric responses and temperature coefficients of capacitance (TCCs) are monitored as function of the grading sequence and direction. Downgraded (decreasing Ba∕Sr ratio with film thickness) films universally display the lowest TCC values. BaTiO3-rich films display finer grain sizes which appear to be propagated into overlying layers, apparently suppressing ferroelectric character. By applying this microstructure effect, properties may be tailored to develop more temperature-stable capacitor elements for microwave devices.
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