Abstract
Titanium Aluminum (TiAl) films have been deposited by physical vapor deposition method using two unbalanced planar magnetrons. Pure Titanium (Ti) and Aluminum (Al) sputtering targets were used for the co-deposition of TiAl films of varying compositions. Precise control of the sputtering yields of target materials were achieved through optimization of applied power. This in turn controlled the composition of the Ti and Al in the grown films. The films were obtained at applied power levels of ‘50W to 900W’ and their compositions were established and affirmed by EDAX measurements. Amorphous TiAl films were formed for a higher Al composition (i.e. from 20 % to 50 Atomic %), while crystalline film was formed for low Al composition (i.e.10%). Crystallinity of the TiAl film was improved at post annealing temperature of 800 C.
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