Abstract
Auger analysis of alloyed ohmic contacts on shows that substantial changes occur throughout a relatively thick interfacial layer during normal alloying cycles. Differences in diffusion of the different semiconductor elements are demonstrated and correlated with their reactivity. It is shown that placing a Cr layer at the semiconductor‐contact interface effectively eliminates interdiffusion of the semiconductor and metals at elevated temperatures. Au/Cr metallization coupled with shallow, high dose ion implants gives contact resistances comparable to conventional alloyed contacts without the need for alloying.
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