Abstract
Thin films of alumina (Al2O3) were deposited over Si 〈100〉 substrates at room temperature at an oxygen gas pressure of 0.03Pa and sputtering power of 60W using DC reactive magnetron sputtering. The composition of the as-deposited film was analyzed by X-ray photoelectron spectroscopy and the O/Al atomic ratio was found to be 1.72. The films were then annealed in vacuum to 350, 550 and 750°C and X-ray diffraction results revealed that both as-deposited and post deposition annealed films were amorphous. The surface morphology and topography of the films was studied using scanning electron microscopy and atomic force microscopy, respectively. A progressive decrease in the root mean square (RMS) roughness of the films from 1.53nm to 0.7nm was observed with increase in the annealing temperature. Al–Al2O3–Al thin film capacitors were then fabricated on p-type Si 〈100〉 substrate to study the effect of temperature and frequency on the dielectric property of the films and the results are discussed.
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